
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SIZF906ADT-T1-GE3

| Part Number | SIZF906ADT-T1-GE3 |
| Datasheet | SIZF906ADT-T1-GE3 datasheet |
| Description | MOSFET DUAL N-CHAN 30V |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual), Schottky |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V, 200nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 15V, 8200pF @ 15V |
| Power - Max | 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair® (6x5) |