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| Part Number | SI8902AEDB-T2-E1 |
| Datasheet | SI8902AEDB-T2-E1 datasheet |
| Description | N-CHANNEL 24-V D-S MOSFET |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 24V |
| Current - Continuous Drain (Id) @ 25°C | 11A |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 5.7W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-UFBGA |
| Supplier Device Package | 6-Micro Foot™ (1.5x1) |