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| Part Number | DMN2016UTS-13 |
| Datasheet | DMN2016UTS-13 datasheet |
| Description | MOSFET 2N-CH 20V 8.58A 8-TSSOP |
| Manufacturer | Diodes Incorporated |
| Series | - |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 8.58A |
| Rds On (Max) @ Id, Vgs | 14.5 mOhm @ 9.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1495pF @ 10V |
| Power - Max | 880mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package | 8-TSSOP |