
Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / GSID600A120S4B1

| Part Number | GSID600A120S4B1 |
| Datasheet | GSID600A120S4B1 datasheet |
| Description | SILICON IGBT MODULES |
| Manufacturer | Global Power Technologies Group |
| Series | Amp+™ |
| Part Status | Active |
| IGBT Type | - |
| Configuration | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 1130A |
| Power - Max | 3060W |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 600A |
| Current - Collector Cutoff (Max) | 1mA |
| Input Capacitance (Cies) @ Vce | 51nF @ 25V |
| Input | Standard |
| NTC Thermistor | Yes |
| Operating Temperature | -40°C ~ 150°C |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |