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| Part Number | SI5517DU-T1-E3 |
| Datasheet | SI5517DU-T1-E3 datasheet |
| Description | MOSFET N/P-CH 20V 6A CHIPFET |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Rds On (Max) @ Id, Vgs | 39 mOhm @ 4.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
| Power - Max | 8.3W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Supplier Device Package | PowerPAK® ChipFet Dual |