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| Part Number | SI2356DS-T1-GE3 |
| Datasheet | SI2356DS-T1-GE3 datasheet |
| Description | MOSFET N-CH 40V 4.3A SOT-23 |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Rds On (Max) @ Id, Vgs | 51 mOhm @ 3.2A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 370pF @ 20V |
| FET Feature | - |
| Power Dissipation (Max) | 960mW (Ta), 1.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |