Product Introduction
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See Product Specifications
Product Specifications
| Part Number |
IRF5852 |
| Datasheet |
IRF5852 datasheet |
| Description |
MOSFET 2N-CH 20V 2.7A 6-TSOP |
| Manufacturer |
Infineon Technologies |
| Series |
HEXFET® |
| Part Status |
Obsolete |
| FET Type |
2 N-Channel (Dual) |
| FET Feature |
Logic Level Gate |
| Drain to Source Voltage (Vdss) |
20V |
| Current - Continuous Drain (Id) @ 25°C |
2.7A |
| Rds On (Max) @ Id, Vgs |
90 mOhm @ 2.7A, 4.5V |
| Vgs(th) (Max) @ Id |
1.25V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds |
400pF @ 15V |
| Power - Max |
960mW |
| Operating Temperature |
- |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package |
6-TSOP |
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