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| Part Number | SIA537EDJ-T1-GE3 |
| Datasheet | SIA537EDJ-T1-GE3 datasheet |
| Description | MOSFET N/P-CH 12V/20V SC-70-6L |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 12V, 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 5.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 455pF @ 6V |
| Power - Max | 7.8W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |