
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / RQK0607AQDQS#H1
Part Number | RQK0607AQDQS#H1 |
Datasheet | RQK0607AQDQS#H1 datasheet |
Description | MOSFET N-CH |
Manufacturer | Renesas Electronics America |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 270 mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 2nC @ 4.5V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 170pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | UPAK |
Package / Case | TO-243AA |