
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI8407DB-T2-E1

| Part Number | SI8407DB-T2-E1 |
| Datasheet | SI8407DB-T2-E1 datasheet |
| Description | MOSFET P-CH 20V 5.8A 2X2 6-MFP |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 27 mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 350µA |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | 1.47W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-Micro Foot™ (2.4x2) |
| Package / Case | 6-MICRO FOOT®CSP |