
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF / A2G35S160-01SR3

| Part Number | A2G35S160-01SR3 |
| Datasheet | A2G35S160-01SR3 datasheet |
| Description | AIRFAST RF POWER GAN TRANSISTOR |
| Manufacturer | NXP USA Inc. |
| Series | - |
| Part Status | Active |
| Transistor Type | LDMOS |
| Frequency | 3.4GHz ~ 3.6GHz |
| Gain | 15.7dB |
| Voltage - Test | 48V |
| Current Rating | - |
| Noise Figure | - |
| Current - Test | 190mA |
| Power - Output | 51dBm |
| Voltage - Rated | 125V |
| Package / Case | NI-400S-2S |
| Supplier Device Package | NI-400S-2S |