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| Part Number | SI4946CDY-T1-GE3 |
| Datasheet | SI4946CDY-T1-GE3 datasheet |
| Description | MOSFET N-CHAN DUAL 60V SO-8 |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta), 6.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 40.9 mOhm @ 5.2A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 30V |
| Power - Max | 2W (Ta), 2.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |