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| Part Number | GT10G131(TE12L,Q) |
| Datasheet | GT10G131(TE12L,Q) datasheet |
| Description | IGBT 400V 1W 8-SOIC |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Part Status | Obsolete |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Current - Collector (Ic) (Max) | - |
| Current - Collector Pulsed (Icm) | 200A |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 4V, 200A |
| Power - Max | 1W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | - |
| Td (on/off) @ 25°C | 3.1µs/2µs |
| Test Condition | - |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
| Supplier Device Package | 8-SOP (5.5x6.0) |