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| Part Number | APTM100H46FT3G |
| Datasheet | APTM100H46FT3G datasheet |
| Description | MOSFET 4N-CH 1000V 19A SP3 |
| Manufacturer | Microsemi Corporation |
| Series | POWER MOS 8™ |
| Part Status | Active |
| FET Type | 4 N-Channel (H-Bridge) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 19A |
| Rds On (Max) @ Id, Vgs | 552 mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800pF @ 25V |
| Power - Max | 357W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | SP3 |
| Supplier Device Package | SP3 |