
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / XP0NG8A00L

| Part Number | XP0NG8A00L |
| Datasheet | XP0NG8A00L datasheet |
| Description | TRANS PREBIAS PNP 0.15W SMINI6 |
| Manufacturer | Panasonic Electronic Components |
| Series | - |
| Part Status | Obsolete |
| Transistor Type | PNP - Pre-Biased + Diode |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 80MHz |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SMINI6-G1 |