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| Part Number | 2SK3666-3-TB-E |
| Datasheet | 2SK3666-3-TB-E datasheet |
| Description | JFET N-CH 10MA 200MW 3CP |
| Manufacturer | ON Semiconductor |
| Series | - |
| Part Status | Active |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1.2mA @ 10V |
| Current Drain (Id) - Max | 10mA |
| Voltage - Cutoff (VGS off) @ Id | 180mV @ 1µA |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 10V |
| Resistance - RDS(On) | 200 Ohms |
| Power - Max | 200mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | 3-CP |