
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPN60R2K1CEATMA1

| Part Number | IPN60R2K1CEATMA1 |
| Datasheet | IPN60R2K1CEATMA1 datasheet |
| Description | MOSFET NCH 600V 3.7A SOT223 |
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.1 Ohm @ 800mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 60µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 100V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 5W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223 |
| Package / Case | SOT-223-3 |