NP33N06YDG-E1-AY

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Part Number	NP33N06YDG-E1-AY
Datasheet	NP33N06YDG-E1-AY datasheet
Description	MOSFET N-CH 60V 33A 8HSON
Manufacturer	Renesas Electronics America
Series	-
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	14 mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	78nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3900pF @ 25V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 97W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HSON
Package / Case	8-SMD, Flat Lead Exposed Pad