
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / HN1C03F-B(TE85L,F)

| Part Number | HN1C03F-B(TE85L,F) |
| Datasheet | HN1C03F-B(TE85L,F) datasheet |
| Description | TRANS 2NPN 20V 0.3A SM6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Part Status | Active |
| Transistor Type | 2 NPN (Dual) |
| Current - Collector (Ic) (Max) | 300mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 3mA, 30mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 350 @ 4mA, 2V |
| Power - Max | 300mW |
| Frequency - Transition | 30MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-74, SOT-457 |
| Supplier Device Package | SM6 |