
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / GA10JT12-247

| Part Number | GA10JT12-247 |
| Datasheet | GA10JT12-247 datasheet |
| Description | TRANS SJT 1.2KV 10A |
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| Part Status | Obsolete |
| FET Type | - |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 1200V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | 140 mOhm @ 10A |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | 170W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AB |
| Package / Case | TO-247-3 |