
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / PMV65ENEAR
Part Number | PMV65ENEAR |
Datasheet | PMV65ENEAR datasheet |
Description | MOSFET N-CH 20V TO-236AB |
Manufacturer | Nexperia USA Inc. |
Series | Automotive, AEC-Q101 |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 2.7A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 20V |
FET Feature | - |
Power Dissipation (Max) | 490mW (Ta), 6.25W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236AB |
Package / Case | TO-236-3, SC-59, SOT-23-3 |