
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI6465DQ-T1-GE3

| Part Number | SI6465DQ-T1-GE3 |
| Datasheet | SI6465DQ-T1-GE3 datasheet |
| Description | MOSFET P-CH 8V 8.8A 8TSSOP |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 12 mOhm @ 8.8A, 4.5V |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 4.5V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSSOP |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |