
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / EMF17T2R

| Part Number | EMF17T2R |
| Datasheet | EMF17T2R datasheet |
| Description | TRANS NPN PREBIAS/PNP 0.15W EMT6 |
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Part Status | Not For New Designs |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Current - Collector (Ic) (Max) | 100mA, 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 20mA, 5V / 180 @ 1mA, 6V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 250MHz, 140MHz |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | EMT6 |