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| Part Number | US6M11TR |
| Datasheet | US6M11TR datasheet |
| Description | MOSFET N/P-CH 20V/12V TUMT6 |
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V, 12V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A, 1.3A |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 10V |
| Power - Max | 1W |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Supplier Device Package | TUMT6 |