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| Part Number | IRF6607TR1 |
| Datasheet | IRF6607TR1 datasheet |
| Description | MOSFET N-CH 30V 27A DIRECTFET |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 94A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Rds On (Max) @ Id, Vgs | 3.3 mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 4.5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 6930pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 42W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ MT |
| Package / Case | DirectFET™ Isometric MT |