
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - RF / BFG10W/X,115

| Part Number | BFG10W/X,115 |
| Datasheet | BFG10W/X,115 datasheet |
| Description | RF TRANS NPN 10V 1.9GHZ 4SO |
| Manufacturer | NXP USA Inc. |
| Series | - |
| Part Status | Obsolete |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| Frequency - Transition | 1.9GHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | - |
| Power - Max | 400mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 50mA, 5V |
| Current - Collector (Ic) (Max) | 250mA |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-343 Reverse Pinning |
| Supplier Device Package | 4-SO |