
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI5920DC-T1-GE3

| Part Number | SI5920DC-T1-GE3 |
| Datasheet | SI5920DC-T1-GE3 datasheet |
| Description | MOSFET 2N-CH 8V 4A 1206-8 |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Rds On (Max) @ Id, Vgs | 32 mOhm @ 6.8A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 680pF @ 4V |
| Power - Max | 3.12W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | 1206-8 ChipFET™ |