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| Part Number | SIRB40DP-T1-GE3 |
| Datasheet | SIRB40DP-T1-GE3 datasheet |
| Description | MOSFET 2 N-CH 40V POWERPAK SO8 |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.25 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 4290pF @ 20V |
| Power - Max | 46.2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Supplier Device Package | PowerPAK® SO-8 Dual |