
Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / RGTH00TS65GC11

| Part Number | RGTH00TS65GC11 |
| Datasheet | RGTH00TS65GC11 datasheet |
| Description | IGBT 650V 85A 277W TO-247N |
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Part Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 85A |
| Current - Collector Pulsed (Icm) | 200A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Power - Max | 277W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | 94nC |
| Td (on/off) @ 25°C | 39ns/143ns |
| Test Condition | 400V, 50A, 10 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247N |