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| Part Number | 1N6630US |
| Datasheet | 1N6630US datasheet |
| Description | DIODE GEN PURP 900V 1.4A D5B |
| Manufacturer | Microsemi Corporation |
| Series | - |
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 900V |
| Current - Average Rectified (Io) | 1.4A |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 3A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 4µA @ 100V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | E-MELF |
| Supplier Device Package | D-5B |
| Operating Temperature - Junction | -65°C ~ 150°C |