
Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / 1N8032-GA

| Part Number | 1N8032-GA |
| Datasheet | 1N8032-GA datasheet |
| Description | DIODE SCHOTTKY 650V 2.5A TO257 |
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| Part Status | Obsolete |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Current - Average Rectified (Io) | 2.5A |
| Voltage - Forward (Vf) (Max) @ If | 1.3V @ 2.5A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 5µA @ 650V |
| Capacitance @ Vr, F | 274pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-257-3 |
| Supplier Device Package | TO-257 |
| Operating Temperature - Junction | -55°C ~ 250°C |