
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / DTDG14GPT100

| Part Number | DTDG14GPT100 |
| Datasheet | DTDG14GPT100 datasheet |
| Description | TRANS PREBIAS NPN 2W MPT3 |
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Part Status | Active |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 1A |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Resistor - Base (R1) | - |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 500mA, 2V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| Frequency - Transition | 80MHz |
| Power - Max | 2W |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Supplier Device Package | MPT3 |